? 2009 ixys corporation, all rights reserved genx3 tm 600v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 150 a i c110 t c = 110c 56 a i cm t c = 25c, 1ms 370 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 150 a (rbsoa) clamped inductive load v ce 0.8 ? v ces p d t c = 25c 330 w t j - 55 ... +150 c t jm 150 c t stg - 40 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g ds100174(08/09) IXGH56N60A3 v ces = 600v i c110 = 56a v ce(sat) 1.35v ultra-low vsat pt igbt for up to 5 khz switching g = gate c = collector e = emitter tab = collector to-247 g d s g c e (tab) advance technical information features z optimized for low conduction losses z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ce = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces, v ge = 0v 50 a t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 44a, v ge = 15v, note 1 1.22 1.35 v t j = 125 c 1.22 v
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60A3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 44a, v ce = 10v, note 1 33 55 s c ie s 3950 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 220 pf c res 56 pf q g 140 nc q ge i c = 44a, v ge = 15v, v ce = 0.5 ? v ces 26 nc q gc 52 nc t d(on) 26 ns t ri 42 ns e on 1.00 mj t d(off) 310 ns t fi 315 550 ns e of f 3.75 6.50 mj t d(on) 24 ns t ri 42 ns e on 2.00 mj t d(off) 495 ns t fi 415 ns e off 6.75 mj r thjc 0.375 c/w r thcs 0.21 c/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain inductive load, t j = 25c i c = 44a, v ge = 15v v ce = 480v, r g = 5 note 2 inductive load, t j = 125c i c = 44a, v ge = 15v v ce = 480v, r g = 5 note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2009 ixys corporation, all rights reserved IXGH56N60A3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0.00.20.40.60.81.01.21.41.61.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50-25 0 255075100125150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 88a i c = 44a i c = 22a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.2 1.6 2.0 2.4 2.8 3.2 56789101112131415 v ge - volts v ce - volts i c = 88a 44a 22a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60A3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 300v i c = 44a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_56n60a3(65)8-04-09-c
? 2009 ixys corporation, all rights reserved IXGH56N60A3 fig. 15. inductive turn-off switching times vs. gate resistance 380 400 420 440 460 480 500 520 540 5 101520253035404550 r g - ohms t f i - nanoseconds 300 400 500 600 700 800 900 1000 1100 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 88a i c = 44a fig. 16. inductive turn-off switching times vs. collector current 200 300 400 500 600 700 20 30 40 50 60 70 80 90 i c - amperes t f i - nanoseconds 200 280 360 440 520 600 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 12. inductive switching energy loss vs. gate resistance 4 6 8 10 12 14 16 18 20 5 101520253035404550 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 88a i c = 44a fig. 13. inductive switching energy loss vs. collector current 0 2 4 6 8 10 12 14 16 18 20 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 2 4 6 8 10 12 14 16 18 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 88a i c = 44a fig. 17. inductive turn-off switching times vs. junction temperature 250 300 350 400 450 500 550 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 200 250 300 350 400 450 500 550 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 44a i c = 88a
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60A3 ixys ref: g_56n60a3(65)8-04-09-c fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 5 101520253035404550 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 120 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 44a i c = 88a fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 20 30 40 50 60 70 80 90 i c - amperes t r i - nanoseconds 15 20 25 30 35 40 45 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 44a i c = 88a
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